Hole Doping to Perylene on Au(110): Photoelectron Momentum Microscopy

Model for doping-induced contrast in photoelectron emission microscopy

We present a model that describes doping-induced contrast in photoelectron emission microscopy by including the effect of surface state distributions and doping-induced band gap reduction. To quantify the contrast, the photoyield from the valence band for near-threshold photoemission is calculated as a function of p-type doping concentration in Si~001!. Various surface state distributions appro...

Photoelectron X-ray Microscopy

The soft-X ray range, between 1-10 nm wavelength, is highly interesting for X-ray microscopy. Taking advantage of it requires, however, to operate a high resolution instrument at a variable wavelength. We describe here an image converter X-ray microscope which is based on secondary pharoemission. This instrument is now developped at the Institut dlOptique (Orsay); it will be installed near ACO ...

Einladung Zum Physikalischen Kolloquium Photoelectron Momentum Microscopy -mapping of the Electronic Bandstructure within Minutes

Photoelectron Momentum Microscopy Mapping of the Electronic Bandstructure Within Minutes The electronic band structure of solids is readily described in reciprocal space (k-space). Owing to the translational symmetry of crystalline solids, the electronic structure can be reduced to the first Brillouin zone, which contains the full information on all electronic bands. Experimental band mapping v...

Atomic hole doping of graphene.

The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure of epitaxial graphene monolayers can be achieved by the adsorption of bismuth, antimony, or gold. In the case of gold doping the Dirac point...

Spin-charge separation: From one hole to finite doping